HEM Ti:Sapphire Material

概述

GT Crystal Systems Ti:Sapphire crystals are grown using the Heat Exchanger Method, (HEM).This unique method of growth allows for production of the world's largest Ti:sapphire crystals, with excellent optical and thermal properties.晶體成長在還原空氣中發生，以便最大化 Ti3+ ions，從而減少寄生吸收和最大化 FOM (品質因數) 值。鐳射棒的高同質性和低波前畸變使得鐳射系統在不犧牲光束剖面品質的前提下能達到高能水平。 Current production of amplifier crystals of up to 175 mm in diameter are ensuring success at the next generation of high intensity laser facilities. 

HEM Ti：藍寶石

• Excellent homogeneity 
• Superior Thermal Properties
• High Figures of Merit (FOM)
• No Bulk Scatter
• High Laser Damage Threshold
• Large sizes and highly doped material available

Attributes

• FOM (Figure Of Merit) Vs. Absorption

  FOM (Figure Of Merit) Vs. Absorption - The HEM process has been designed to maximize the lasing characteristics of Ti:sapphire thereby delivering the highest FOM values in the industry.Many companies claim to have high FOM values, however, they do not test the "actual" values as GT Crystal Systems does.We measure FOM based on (absorption @ 514nm ) / (absorption @ 800nm). Each GT Ti:Sapphire crystal is tested to verify FOM values and ensure that the intrinsic properties of our material are well suited to support your laser’s high performance. 

• Ti:Sapphire Absorption and Fluorescence Spectra

  Tunability Range of HEM Ti:Sapphire -  Ti:Sapphire has a wide tunable range from 650 nm to 1200 nm with peak intensity at ~800 nm.This tunable range gives customers a wide variety of wavelength options to maximize their laser performance for specific laser applications. The wide bandwidth of the material allows for short pulses and high repetition rates.

• Absorption / Fluorescence - Ti:Sapphire lasers are typically operated using π-polarization.This chart shows the absorption and fluorescence bands of Ti:Sapphire in π-polarization.

• Brewster Cut Configuitation

  Brewster's Cut Laser Crystal - Most of our smaller crystals are polished with Brewster's angle ends to minimize reflection losses.Brewster's angle is based on the index of refraction of the material.The index of refraction for Ti:sapphire is ~1.76, resulting in ~60.4° Brewster's angle.The C-axis rotation is also very important to maximize power in π-polarization.GT Crystal Systems has developed a method to maintain accurate alignment of Brewster's angle to the C-axis, thus improving lasing performance.  

• Super Polished Surfaces

  Advanced polishing and coatings - We employ the most advanced polishing techniques in order to create ultra smooth surfaces with low sub-surface damage.We have performed testing of differently processed surfaces to ensure that laser damage threshold values are maximized. Additionally, polishing processes have been optimized to support excellent transmitted wave front values. By combining high quality material, the correct polishing techniques and optimized coatings, we provide the highest performance laser rods available.
  

• Ti:Sapphire Anti-Reflection Coating

  Anti-Reflection Coating - GT Crystal Systems offers advanced anti-reflection coatings for multipass amplifier crystals.Our coatings are engineered to provide maximum efficiency at peak power levels. Our coatings are designed specifically for high power laser applications with minimum reflection losses at the pump beam and lasing beams.These coatings have shown consistently high laser damage threshold results allowing laser operators to calculate pump powers accurately, thereby maximizing power output with low risk of damage.

Features

High quality Ti:sapphire laser crystals begin with perfect crystalline structure and the correct 3+ valance electron state. We ensure these requirements through our multiple-stage, rigorous inspection process, using state-of-the-art test and measurement equipment.We test our rods for absorption values, homogeneity, light scatter, FOM, flatness, and transmitted wave fronts.Each HEM laser rod is examined and verified utilizing advanced equipment and expert laser technicians.Total focus on quality and accuracy guarantees that our laser crystals dimensions, surfaces and crystalline structure provide the foundation for your laser platform’s high power levels and excellent beam profiles.

Features of HEM Ti:sapphire:

• Laser Crystals up to 200 mm in diameter
• Many design options including rectangles, squares and your unique designs
• Low damage polished plano-ends, Brewster's angle ends
• Highest laser damage threshold coatings available
• Path lengths ranging from 1mm to 75mm
• Absorption values from 0.5 to 10+ /cm @ alpha 514nm

Amplification of Ti-Sapphire Laser Crystal

Applications 

HEM Ti:Sapphire's wide emission range, (660 nm to 1180 nm), high-power density pumping capability along with excellent crystalline structure enable today’s high intensity laser platforms. The high intensity platforms utilize Ti:sapphire because of high peak-power, short pulses, increasing repetition rates and excellent beam quality and control. These facilities are creating the next generation of laser based applications such as radio therapy, proton therapy, accelerator physics, nuclear physics, infrared spectroscopy and materials characterization.GT Crystal Systems works closely with its customers to promote new designs and technology for the advancement of high intensity lasers.

Please contact sapphiresales@gtat.com or call +1.978.745.0088 with any questions.